| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a power semiconductor device which can suppress a vibration phenomenon of a current/voltage occurring during reverse recovery operation while suppressing loss during conduction of a reflux diode and loss during transition operation. <P>SOLUTION: The semiconductor device includes the reflux diode which performs unipolar operation, and a semiconductor circuit which is structured by connecting a capacitor and resistance in series and is connected to the reflux diode in parallel. The semiconductor circuit 200 includes a semiconductor base 11 functioning as at least a part of the resistance 220, a capacity decline preventing region 1001 arranged so as to be in contact with an upper surface of the semiconductor base, and a capacitor dielectric film 12 arranged on the capacity decline preventing region 1001 and functioning as at least a part of the capacitor 210. The capacity decline preventing region 1001 relieves expansion of a depletion layer in the semiconductor base 11 when a reverse bias voltage is applied on the reflux diode. <P>COPYRIGHT: (C)2010,JPO&INPIT |
