发明名称 CHEMICAL AMPLIFICATION TYPE RESIST COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist composition having a high transmittance to light at a wavelength of 170 nm or less, suitable particularly for use in F<SB>2</SB>excimer laser lithography. <P>SOLUTION: The chemical amplification resist composition contains a binder resin and a radiation-sensitive compound, wherein the binder resin is soluble in alkali by itself or becomes soluble in alkali by a chemical change caused by the action of the radiation-sensitive compound after irradiation and has a polymerization unit derived from a monomer of formula (1). In the formula, Q represents hydrogen or methyl; and R<SP>1</SP>represents 1-14C fluoroalkyl having a hydroxyl group substituted for at least one fluorine atom. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010204672(A) 申请公布日期 2010.09.16
申请号 JP20100084850 申请日期 2010.04.01
申请人 SUMITOMO CHEMICAL CO LTD 发明人 KAMIYA YASUNORI;HASHIMOTO KAZUHIKO;MIYA YOSHIKO;INOUE HIROTAKA
分类号 G03F7/039;C08F220/00;C08L33/06;G03F7/004;G03F7/038;H01L21/027 主分类号 G03F7/039
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