| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase the saturation amount of electric charges and reduce noise at the same time, by maximizing the area of a photoelectric conversion portion (photodiode) and the area of an amplification transistor and forming the photoelectric conversion portion in a P-N junction having a steep concentration profile. <P>SOLUTION: A solid-state imaging device includes a semiconductor substrate 11; a photoelectric conversion portion 21, that is formed on the front surface side of the semiconductor substrate 11 in the semiconductor substrate 11 and photoelectrically converts incident light to obtain signal charges; a transfer gate TRG, that is formed on a portion of the semiconductor substrate 11 adjacent to the photoelectric conversion portion 21 and reads out signal charges from the photoelectric conversion portion 21; an insulating layer 12, formed on the photoelectric conversion portion 21 of the semiconductor substrate 11; a silicon layer 13 formed on the insulation layer 12; and a pixel transistor portion 14, that includes the silicon layer 13 as an active region formed on the insulating layer 12 and amplifies and outputs the signal charges read out by the transfer gate TRG. <P>COPYRIGHT: (C)2010,JPO&INPIT |
