| 摘要 |
<P>PROBLEM TO BE SOLVED: To attain plasma cleaning at low consumption for an electrode of placing a substrate to be processed, in a step of plasma cleaning the inside of a processing container without a substrate to be processed, in a plasma processing apparatus for semiconductor manufacturing. <P>SOLUTION: While plasma cleaning is continued, magnetic field produced by a magnetic field generator 151 from the outside of a processing container 100 produces electron cyclotron resonance around the outer periphery of the electrode 112 for placement within the processing container, and plasma density is reduced on the electrode 112 for placement. <P>COPYRIGHT: (C)2010,JPO&INPIT |
