A SILICON-BASED LUMINOUS MATERIAL AND LUMINOUS DEVICE

摘要

A silicon-based luminous material and a silicon-based luminous device are provided. The silicon-based luminous material includes: at least two-layer modulation layer (2, 4), and an indirect band gap layer (3) located between each of the two-layer modulation layer (2, 4). The silicon-based luminous material can achieve quasi-direct band gap luminous of the silicon-based material. The growing method of the material uses the existing CVD or MBE material growing technique.