发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce a convergence time of a vibration phenomenon occurring during reverse recovery operation of a reflux diode. <P>SOLUTION: The semiconductor device includes the reflux diode 100 which performs unipolar action, and a semiconductor snubber 200 which is connected to the reflux diode 100 in parallel, and includes a semiconductor substrate region. The semiconductor snubber 200 includes a capacitor 210 formed at least on one end side of the substrate region during reverse bias of the reflux diode 100, a resistance 220 including a part of the substrate region, and a reverse blocking diode 222 formed on at least a part of the substrate region so as to be in a reverse blocking state with respect to forward bias of the reflux diode 100. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010205758(A) 申请公布日期 2010.09.16
申请号 JP20090046347 申请日期 2009.02.27
申请人 NISSAN MOTOR CO LTD 发明人 HAYASHI TETSUYA;HOSHI MASAKATSU;TANAKA HIDEAKI;YAMAGAMI SHIGEHARU;SUZUKI TATSUHIRO
分类号 H01L21/822;H01L21/28;H01L21/337;H01L21/8234;H01L27/04;H01L27/06;H01L27/088;H01L29/47;H01L29/78;H01L29/80;H01L29/808;H01L29/861;H01L29/872 主分类号 H01L21/822
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