METHOD FOR PRODUCING GROUP III-V COMPOUND SEMICONDUCTOR CRYSTAL, METHOD FOR MANUFACTURING GROUP III-V COMPOUND SEMICONDUCTOR SUBSTRATE, AND GROUP III-V COMPOUND SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a group III-V compound semiconductor crystal suppressing cracks in the group III-V compound semiconductor crystal to be grown, and suppressing contamination in a chamber while maintaining a low cost; and to provide a group III-V compound semiconductor substrate and a method for manufacturing the same. SOLUTION: This method for producing the group III-V compound semiconductor crystal 13 comprises: a step of housing a raw material 15 for growing the crystal and a liquid sealant 17 in a crucible 103 arranged in a chamber 101; a step of melting the raw material 15 for growing the crystal and the liquid sealant 17 under pressure, and solidifying the raw material 15 for growing the crystal so as to grow the group III-V compound semiconductor crystal 13; and a step of lowering the temperature inside the chamber 101. The temperature lowering step includes a step of depressurizing inside the chamber 101 to >60 kPa and≤400 kPa before the temperature reaches the softening point of the liquid sealant 17. COPYRIGHT: (C)2010,JPO&INPIT