发明名称 MULTILAYER-TYPE SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To control a large scale-increase and increase in cost and fixes the potential of a reference voltage of each semiconductor device to be substantially constant. SOLUTION: Semiconductor devices 11-1n are mounted on a printed wiring substrate 110 via interposers 31-3n, in three dimensions. Each semiconductor device 11-1n has a power source terminal 11a-1na, a ground terminal 11b-11nb, and a reference voltage terminal 11c-11nc respectively. The power source terminal 11a-11na of each semiconductor device and a power source circuit 120 are connected through power source wiring 200. The ground terminal 11b-11nb of each semiconductor device, and the power source circuit 120 are connected through ground wiring 300. A reference voltage Vref, which is referred to each semiconductor device, is provided on the basis of each supply voltage VD1-VDn supplied between terminals of power source terminal and ground terminal of each semiconductor device, and the resistance values of the power source wiring and the resistance value of the ground wiring are set to be substantially the same. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010206118(A) 申请公布日期 2010.09.16
申请号 JP20090052881 申请日期 2009.03.06
申请人 CANON INC 发明人 SEKIGUCHI KIYOSHI
分类号 H01L25/10;H01L21/822;H01L23/12;H01L25/11;H01L25/18;H01L27/04 主分类号 H01L25/10
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