发明名称 METHOD FOR MANUFACTURING ZINC OXIDE BASED SEMICONDUCTOR DEVICE
摘要 A method for manufacturing a ZnO based compound semiconductor device including a contact for a p-type ZnO based compound semiconductor electrode is provided. The method includes forming a stacked body including a substrate, and an n-type ZnO based semiconductor layer and a p-type ZnO based semiconductor layer on the substrate, with the p-type ZnO based semiconductor layer exposed to outside. The stacked body is subjected to heat treatment so that a surface temperature of the p-type ZnO based semiconductor layer is in the range of 250° C. to 500° C. After the heat treatment, a p-side metal electrode is formed on the p-type ZnO based semiconductor layer at a temperature lower than 550° C. And an n-side metal electrode is formed on the n-type ZnO based semiconductor layer.
申请公布号 US2010233836(A1) 申请公布日期 2010.09.16
申请号 US20100721869 申请日期 2010.03.11
申请人 STANLEY ELECTRIC CO., LTD. 发明人 KYOTANI CHIZU;SANO MICHIHIRO
分类号 H01L33/28;H01L21/36;H01L21/443 主分类号 H01L33/28
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