发明名称 A METHOD OF PRODUCING A HETEROSTRUCTURE WITH LOCAL ADAPTATION OF THE THERMAL EXPANSION COEFFICIENT
摘要 <p>A method of producing a heterostructure (200) comprising bonding at least one first substrate (110) having a first thermal expansion coefficient onto a second substrate (120) having a second thermal expansion coefficient, the first thermal expansion coefficient being different from the second thermal expansion coefficient. Prior to bonding, trenches (111) are formed in one of the two substrates from the bonding surface (110a) of the substrate (110). The trenches (111) are filled with a material (130) having a third thermal expansion coefficient lying between the first and second thermal expansion coefficients.</p>
申请公布号 WO2010102686(A1) 申请公布日期 2010.09.16
申请号 WO2009EP67919 申请日期 2009.12.24
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;COLNAT, CYRILLE 发明人 COLNAT, CYRILLE
分类号 H01L21/62 主分类号 H01L21/62
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