| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device in which the distribution of light emitting is excellent. <P>SOLUTION: The semiconductor light emitting device includes: a semiconductor multilayer structure including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode connected to the first semiconductor layer on the first major surface of the semiconductor multilayer structure; a second electrode provided on the second semiconductor layer on the first major surface of the semiconductor multilayer structure; and a third electrode selectively provided on the second electrode. The second electrode is provided between the first electrode and the third electrode as viewed from a direction perpendicular to the first major surface of the semiconductor multilayer structure, and includes: a first region having at least one notch extending toward a route connecting between the first electrode and the third electrode; a second region provided around the first electrode and having no notch; and a third region provided around the third electrode and having no notch. <P>COPYRIGHT: (C)2010,JPO&INPIT |
