NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting device which has excellent operation characteristics and is highly reliable by making small the direction dependency of resistivity by suppressing an increase in resistance due to a band offset in a laminating direction of a p-type nitride semiconductor layer of a superlattice structure and also by suppressing large current spreading in a lateral direction due to an influence of a two-dimensional hole gas layer.

SOLUTION: The nitride semiconductor light-emitting device includes: an n-type nitride semiconductor layer 3 provided over a semiconductor substrate 1; an active layer 5 arranged over the n-type nitride semiconductor layer; and a p-type nitride semiconductor layer 8 arranged over the active layer. The p-type nitride semiconductor layer includes a layered structure wherein a layered structure comprising a first nitride semiconductor layer 8b having a three-dimensional island structure and a second nitride semiconductor layer 8a formed covering the first nitride semiconductor layer is formed repeatedly a plurality of times. Resistance in the laminating direction is reduced by using three-dimensional island structures which are cut stages in the laminating direction.

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