NOTCH-FREE ETCHING OF HIGH ASPECT RATIO SOI STRUCTURES USING ALTERNATING DEPOSITION AND ETCHING AND USING PULSED PLASMA

摘要

PROBLEM TO BE SOLVED: To provide a method of preventing notching during cyclical etching and deposition on a substrate via an inductively coupled plasma source.

SOLUTION: In accordance with the method, the inductively coupled plasma source generates pulses to prevent charge from being accumulated on the substrate. The off state of the inductively coupled plasma source is long enough to permit a charge outflow, but it is not so long as a low duty cycle causes the reduction of an etching rate. The pulse generation may be controlled such that pulses are generated only when the substrate is etched to expose an insulating layer. A bias voltage may also be applied to the insulating layer. The bias voltage may be pulsed in phase or out of phase with pulse generation in the inductively coupled plasma source.

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