发明名称 PHOTOSENSITIVE RESIN COMPOSITION FOR OPTICAL NANOIMPRINT LITHOGRAPHY, METHOD OF FORMING PATTERN USING THE SAME, MICROSTRUCTURE, AND METHOD OF REMOVING PHOTOCURED BODY
摘要 PROBLEM TO BE SOLVED: To provide a photosensitive resin composition for optical nanoimprint lithography with a superior removing property for a photocured body, a method of forming a resist pattern, a microstructure, and a method of removing the photocured body. SOLUTION: The photosensitive resin composition for optical nanoimprint lithography contains a photopolymerizable compound (A) and a photopoymerization initiator (B). The photopoymerization initiator (B) contains a compound producing active species when irradiated with a first active light beam, and the photopolymerizable compound (A) contains a compound containing, in a molecule, two or more polymerizable groups and a characteristic group containing a bond disconnected when irradiated with a second active light beam having a shorter wavelength than the first active light beam. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010206115(A) 申请公布日期 2010.09.16
申请号 JP20090052694 申请日期 2009.03.05
申请人 HITACHI CHEM CO LTD 发明人 OTA EMIKO;KAJI MAKOTO;JIANG XUESONG
分类号 H01L21/027;B29C59/02;C08F16/32;C08F20/10;C08F290/06;C08G65/332 主分类号 H01L21/027
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