ELECTROPLATING INTERCONNECTION STRUCTURE ON INTEGRATED CIRCUIT CHIP

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a submicron interconnection structure for an integrated circuit. SOLUTION: A seamless conductor without void can be obtained by electroplating Cu from a bath, usually employed for adhering Cu metal which comprises an adhering agent and which is flat, glossy, ductile and low stress. The capability of this method which permits super feature fill up without leaving void or seam is unique and more excellent than any other adhering methods. The resistance of electromigration having a structure utilizing Cu electroplated by this method is superior to the resistance of electromigration having a structure manufactured by employing Cu adhered in an AlCu structure or by a method except electroplating. COPYRIGHT: (C)2010,JPO&INPIT