发明名称 Programmable resistance memory
摘要 A memory includes an interface through which it provides access to memory cells, such as phase change memory cells. Such access permits circuitry located on a separate integrated circuit to provide access signals, including read and write signals suitable for binary or multi-level accesses.
申请公布号 US2010232205(A1) 申请公布日期 2010.09.16
申请号 US20090381259 申请日期 2009.03.10
申请人 OVONYX, INC. 发明人 PARKINSON WARD
分类号 G11C11/00;G11C11/416 主分类号 G11C11/00
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