发明名称 |
ADVANCED PROCESS CONTROL FOR GATE PROFILE CONTROL |
摘要 |
A method for fabricating a integrated circuit with improved performance is disclosed. The method comprises providing a substrate; performing a plurality of processes to form a gate stack over the substrate, wherein the gate stack comprises a gate layer; measuring a grain size of the gate layer after at least one of the plurality of processes; determining whether the measured grain size is within a target range; and modifying a recipe of at least one of the plurality of processes if the measured grain size of the gate layer is not within the target range.
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申请公布号 |
US2010234975(A1) |
申请公布日期 |
2010.09.16 |
申请号 |
US20090402124 |
申请日期 |
2009.03.11 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WU CHIH-JEN;HUANG CHEN-MING;TU AN-CHUN |
分类号 |
G05B13/02;G06F17/00 |
主分类号 |
G05B13/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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