| 发明名称 |
METHOD AND SYSTEM FOR TONE INVERTING OF RESIDUAL LAYER TOLERANT IMPRINT LITHOGRAPHY |
| 摘要 |
A method (and apparatus) of imprint lithography, includes imprinting, via a patterned mask, a pattern into a resist layer on a substrate, and overlaying a cladding layer over the imprinted resist layer. A portion of the cladding layer is used as a hard mask for a subsequent processing.
|
| 申请公布号 |
US2010230385(A1) |
申请公布日期 |
2010.09.16 |
| 申请号 |
US20100787417 |
申请日期 |
2010.05.26 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COLBURN MATTHEW E.;VAN KESSEL THEODORE G.;MARTIN YVES C.;PFEIFFER DIRK |
| 分类号 |
B29C59/02;C23C14/34;C23F1/00 |
主分类号 |
B29C59/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
