| 发明名称 |
THREE-DIMENSIONAL MEMORY ARRAY COMPRISING VERTICAL SWITCHES HAVING THREE TERMINALS |
| 摘要 |
<p>A memory device includes a substrate, and, disposed thereover, an array of vertical memory switches. The switches are for example transistors or four-layer diodes (e.g. thyristors). The switches are connected to an overlying memory material, e.g. phase-change material, resistance-change material or one-time-programmable material.</p> |
| 申请公布号 |
WO2010104918(A1) |
申请公布日期 |
2010.09.16 |
| 申请号 |
WO2010US26775 |
申请日期 |
2010.03.10 |
| 申请人 |
CONTOUR SEMICONDUCTOR, INC.;SHEPARD, DANIEL, R. |
发明人 |
SHEPARD, DANIEL, R. |
| 分类号 |
H01L27/102;G11C11/56;G11C16/02;G11C17/14;H01L27/06;H01L27/105;H01L27/112;H01L27/24;H01L29/78;H01L29/87 |
主分类号 |
H01L27/102 |
| 代理机构 |
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代理人 |
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| 主权项 |
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