| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a gallium nitride (GaN)-based compound semiconductor light-emitting element having superior light-emitting characteristics and high light extraction efficiency, and to provide a lamp. <P>SOLUTION: The method is used to manufacture the GaN-based semiconductor light-emitting element, including at least a buffer layer 102, an n-type semiconductor layer 103, a light-emitting layer 104, and a p-type semiconductor layer 105 on a translucent substrate 101 having a projected portion. The projected portion has a bottom-surafce diameter or a diagonal length of 0.1-2 μm, and a height of 0.1-2 μm, and the buffer layer 102 is deposited by a spattering method. <P>COPYRIGHT: (C)2010,JPO&INPIT |
