| 摘要 |
PROBLEM TO BE SOLVED: To protect static electricity applied between terminals striding over an electrical power system by ensuring sufficient discharging ability while compressing a packaging area by combining semiconductor layers with one another in a semiconductor device including a plurality of electrical power systems. SOLUTION: The semiconductor device includes: a first diode portion having a first P-type semiconductor layer, a second N-type semiconductor layer disposed within the first semiconductor layer, and a third N-type semiconductor layer surrounding the first semiconductor layer; and a second diode portion having a fourth P-type semiconductor layer, a fifth N-type semiconductor layer disposed within the fourth semiconductor layer, and a sixth N-type semiconductor layer surrounding the fourth semiconductor layer. In connection among the semiconductor layers, the first and fifth semiconductor layers are connected with a first reference voltage, the second and fourth semiconductor layers are connected with a second reference voltage, the third semiconductor layer is connected with a second supply voltage, and the sixth semiconductor layer is connected with a first supply voltage. COPYRIGHT: (C)2010,JPO&INPIT
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