| 摘要 |
PROBLEM TO BE SOLVED: To provide: a gas control device capable of preventing gas from rushing into a chamber where a mass flow controller is securely in a completely closed state at time of an open processing; a method of controlling the gas control device; and an ion implantation device using them. SOLUTION: The gas control device comprises a variable flow rate valve 41, the mass flow controller 4 controlling gas flow rate flowing inside of the chamber 1 so as to become a predetermined flow rate, a primary side valve 6 mounted upstream of the mass flow controller 4, a secondary side valve 7 mounted downstream of the mass controller 4, and a control part 8 which, at time of gas closed processing for stopping the gas from flowing into the chamber 1, makes the mass flow controller 4, the primary-side valve 6 and the secondary-side valve 7 completely closed in that order, or makes the primary-side valve 6 completely closed, then the mass flow controller 4 completely closed within a first predetermined period, and then the secondary-side valve 7 completely closed. COPYRIGHT: (C)2010,JPO&INPIT
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