| 摘要 |
The present invention provides an array substrate comprising: a substrate, having a thin film transistor (TFT) formed thereupon, the TFT having a gate electrode, a source electrode and a drain electrode; a first metal layer, formed on the substrate, and comprising a gate line and the gate electrode of the TFT; a first insulating layer, covering the first metal layer and the substrate; a semiconductor layer, an ohmic contact layer, and a second metal layer, which are sequentially formed on the first insulating layer; a second insulating layer, covering the semiconductor layer, the ohmic contact layer, and the second metal layer; a pixel electrode, provided on the second insulating layer and is connected to the drain electrode. The second metal layer further comprises an etch-blocking pattern in the peripheral area of the pixel electrode within the overlapping region between the pixel electrode and the first metal layer. |
