SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a semiconductor device which comprises a substrate (11), a thin film transistor (20) having a first semiconductor layer (16A) that is supported by the substrate (11), a thin film diode (30) having a second semiconductor layer (16B) that is supported by the substrate (11), and a metal layer (12) that is formed between the substrate (11) and the second semiconductor layer (16B). The first semiconductor layer (16A) is a laterally grown crystalline semiconductor film, and the second semiconductor layer (16B) is a crystalline semiconductor film that contains fine crystal grains. The average surface roughness of the second semiconductor layer (16B) is higher than the average surface roughness of the first semiconductor layer (16A). Consequently, the optical sensitivity of the TFD is improved and the reliability of the TFT is improved, as compared with those in the conventional semiconductor devices.