SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which is formed by using an oxide semiconductor layer and includes a thin-film transistor excellent in electric property.

SOLUTION: An In-Sn-O based oxide semiconductor layer including SiOXis used for a channel formation region, and a source region or a drain region is formed between both a source electrode layer and drain electrode layer, and the In-Sn-O based oxide semiconductor layer including SiOXin order to reduce a contact resistance between the In-Sn-O based oxide semiconductor layer including SiOXand a wiring layer formed from a metal material having a low electric resistance. An In-Sn-O based oxide semiconductor layer, which is placed in the same layer and does not include SiOX, is used for the source region or the drain region, and a pixel region.

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