| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To achieve a memory cell array of nonvolatile variable resistance elements that respectively suppress a sneak current, achieve a reduction in cell area, and are easily manufacturable. <P>SOLUTION: A nonvolatile semiconductor memory device is configured as follows. A three-terminal type nonvolatile variable resistance element includes: a first electrode 12; a second electrode 14; a variable resistor 13 electrically connected with both of the first/second electrodes; and a control electrode 16 facing the variable resistor 13 via a dielectric layer 15. One memory cell is composed by using the three-terminal type nonvolatile variable resistance element. A plurality of the memory cells are respectively arranged in row and column directions in a matrix form. In one memory cell and the other memory cell that are adjacent to each other in the column direction, the first electrode of the one memory cell and the second electrode of the other memory cell are electrically connected to each other so as to connect the plurality of memory cells in series in the column direction, thereby constituting a column memory cell. Both ends of the column memory cell are connected to a bit line while the control electrode of the memory cell is connected to a word line extending in the row direction. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
