| 摘要 |
PROBLEM TO BE SOLVED: To achieve a highly reliable semiconductor device, which deters the oxidation of a conductive plug and has stable contact resistance. SOLUTION: The semiconductor device forms a conductive layer 112 consisting of a conductive material (metal for example) having conductivity even after oxidation between a ferroelectric capacitor structure 100, constituted while pinching a ferroelectric film 102 by a lower electrode 101 and an upper electrode 103, and the conductive plug 110. In this case, the base film of the conductive plug 110 is used as a conductive layer 112 (formed of at least one material selected from Ag, Ni, Cu, Zn, In, Sn, Ir, Ru, Rh, Pd and Os). COPYRIGHT: (C)2010,JPO&INPIT |
