发明名称 CHARGED PARTICLE BEAM LITHOGRAPHY SYSTEM AND METHOD FOR CORRECTING MISALIGNMENT OF OPTICAL AXIS OF CHARGED PARTICLE BEAM
摘要 PROBLEM TO BE SOLVED: To provide a device for correcting misalignment of the optical axis of a beam even when the beam is turned ON/OFF by a blanker at a high speed. SOLUTION: A lithography system 100 includes an XY stage 105, an electron gun 201 which emits the electron beam 200 to the stage side, a blanking aperture 214, the blanker 212 which has a terminating resistor at an electrode for blanking so as to suppress voltage reflection, and applies a prescribed voltage to the electrode to deflect the electron beam passing by the electrode onto the blanking aperture 214, an alignment coil 216 for correcting misalignment of the optical axis of the electron beam caused when the beam is turned ON/OFF by repeatedly applying the voltage to the blanker 212, and an alignment coil control circuit 130 which controls the alignment coil 216 so as to correct an optical axis misalignment amount. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010206126(A) 申请公布日期 2010.09.16
申请号 JP20090052995 申请日期 2009.03.06
申请人 NUFLARE TECHNOLOGY INC 发明人 SAKAI MICHIHIRO;KAKEHI RYOICHI;HATTORI SEIJI
分类号 H01L21/027;H01J37/305 主分类号 H01L21/027
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