发明名称 SEMICONDUCTOR DEVICE FOR SIGNAL AMPLIFICATION
摘要 A semiconductor device for transmitting-signal amplification which has a fine resolution, a high dynamic range, a small occupied area, and low power consumption, is realized. An input signal amplitude is reduced every one half by a ladder network, and a transconductance amplifier stage is arranged corresponding to each node of the ladder network. An output of the transconductance amplifier stage is coupled to an output signal line in common. According to a control word WC<21:0>, the transconductance amplifier stage is enabled selectively, and the output current which appears in the output signal line is added.
申请公布号 US2010231305(A1) 申请公布日期 2010.09.16
申请号 US20100721261 申请日期 2010.03.10
申请人 RENESAS TECHNOLOGY CORP. 发明人 MIZOKAMI MASAKAZU;MARUYAMA TAKAYA;HORI KAZUAKI
分类号 H03F3/68 主分类号 H03F3/68
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