发明名称 |
Semiconductor Die and Method of Forming Noise Absorbing Regions Between THVS in Peripheral Region of the Die |
摘要 |
A semiconductor wafer has a plurality of semiconductor die. A peripheral region is formed around the die. An insulating material is formed in the peripheral region. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. A conductive layer is formed between the conductive THV and contact pads of the semiconductor die. A noise absorbing material is deposited in the peripheral region between the conductive THV to isolate the semiconductor die from intra-device interference. The noise absorbing material extends through the peripheral region from a first side of the semiconductor die to a second side of the semiconductor die. The noise absorbing material has an angular, semi-circular, or rectangular shape. The noise absorbing material can be dispersed in the peripheral region between the conductive THV.
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申请公布号 |
US2010230822(A1) |
申请公布日期 |
2010.09.16 |
申请号 |
US20090404069 |
申请日期 |
2009.03.13 |
申请人 |
STATS CHIPPAC, LTD. |
发明人 |
PAGAILA REZA A.;DO BYUNG TAI;HUANG SHUANGWU;SUTHIWONGSUNTHORN NATHAPONG;MERILO DIOSCORO |
分类号 |
H01L23/48;H01L21/50;H01L21/768 |
主分类号 |
H01L23/48 |
代理机构 |
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主权项 |
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地址 |
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