发明名称 A CIRCUIT FOR MEASURING MAGNITUDE OF ELECTROSTATIC DISCHARGE (ESD) EVENTS FOR SEMICONDUCTOR CHIP BONDING
摘要 <p>A circuit for recording a magnitude of an ESD event during semiconductor assembly includes a voltage divider connected between an input and a ground. The circuit also includes a measurement block having a recorder device. Each measurement block receives current from a segment of the voltage divider. The magnitude of the ESD event is determined based upon a read-out of the measurement devices after the ESD event. The recorder device may be a capacitor that would be damaged during the ESD event. During the ESD event the capacitor may be damaged. Reading out the recorder device determines if the magnitude of the ESD event exceeded a threshold magnitude that damages the capacitor.</p>
申请公布号 WO2010104877(A1) 申请公布日期 2010.09.16
申请号 WO2010US26697 申请日期 2010.03.09
申请人 QUALCOMM INCORPORATED;WORLEY, EUGENE, R.;HENDERSON, BRIAN, MATTHEW 发明人 WORLEY, EUGENE, R.;HENDERSON, BRIAN, MATTHEW
分类号 G01R29/22;G01R31/00 主分类号 G01R29/22
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