| 摘要 |
The present invention provides a method for manufacturing a silicon thin film, comprising the steps of: preparing a substrate; supplying a silicon source onto the substrate; and forming a silicon thin film from the silicon source and simultaneously irradiating an electron beam and an ion beam, or forming a silicon thin film from the silicon source and irradiating an electron beam and an ion beam onto the substrate as a post-treatment. According to the present invention, the electron beam irradiated onto the silicon thin film deposited on the substrate via the supplied silicon source provides the silicon thin film with energy in-situ to thereby crystallize the silicon thin film in-situ, or an electron beam and an ion beam are irradiated as a post-treatment after the formation of an amorphous silicon thin film to thereby crystallize the silicon thin film. Further, as an ion beam is irradiated simultaneously with the irradiation of an electron beam, the charges of the electron beam accumulated on the surface of the substrate are neutralized by the charges of the ion beam, thereby preventing electron beam charges from accumulating on the surface of the substrate, and thus preventing the formation of unnecessary surface currents, and crystallizing the amorphous silicon thin film in an efficient manner.
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