发明名称 |
MATHOD TO MANUFACTURE LARGE UNIFORM INGOTS OF SILICON CARBIDE BY SUBLIMATION/CONDENSATION PROCESSES |
摘要 |
This invention relates to a method for the manufacture of monolithic ingot of silicon carbide comprising: i) introducing a mixture comprising polysilicon metal chips and carbon powder into a cylindrical reaction cell having a lid; ii) sealing the cylindrical reaction cell of i); iii) introducing the cylindrical reaction cell of ii) into a vacuum furnace; iv) evacuating the furnace of iii); v) filling the furnace of iv) with a gas mixture which is substantially inert gas to near atmospheric pressure; vi) heating the cylindrical reaction cell in the furnace of v) to a temperature of from 1600 to 2500° C.; vii) reducing the pressure in the cylindrical reaction cell of vi) to less than 50 torr but not less than 0.05 torr; and viii) allowing for substantial sublimation and condensation of the vapors on the inside of the lid of the cylindrical reaction cell of vii). |
申请公布号 |
KR20100100944(A) |
申请公布日期 |
2010.09.15 |
申请号 |
KR20107014917 |
申请日期 |
2008.10.08 |
申请人 |
DOW CORNING CORPORATION |
发明人 |
LOBODA MARK;PARK, SEUNG HO;TORRES VICTOR |
分类号 |
C30B23/00;C01B31/36;C30B29/36;H01L21/02 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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