发明名称 |
SENSING MEMORY CELLS |
摘要 |
<p>The present disclosure includes methods, devices, modules, and systems for operating memory cells. One method embodiment includes applying a ramping voltage to a control gate of a memory cell and to an analog-to-digital converter (ADC). The aforementioned embodiment of a method also includes detecting an output of the ADC at least partially in response to when the ramping voltage causes the memory cell to trip sense circuitry.</p> |
申请公布号 |
EP2227812(A2) |
申请公布日期 |
2010.09.15 |
申请号 |
EP20080856920 |
申请日期 |
2008.12.01 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
SARIN, VISHAL;HOEI, JUNG, SHENG;ROOHPARVAR, FRANKIE, F.;MAROTTA, GIULIO-GIUSEPPE |
分类号 |
G11C16/26;G11C16/02;G11C16/30 |
主分类号 |
G11C16/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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