FABRICATING METHOD THE MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a memory device is provided to prevent the leakage current of a blocking dielectric film by suppressing the interfacial reaction of an silicon oxide in a first dielectric film and an aluminum oxide in a third dielectric film. CONSTITUTION: A tunnel dielectric film(110) is formed on a substrate(10). An electric charge trapping film(120) is formed on the tunnel dielectric film. A blocking dielectric film(130) is formed on the electric charge trapping film. A first dielectric film(131) including a silicon oxide is formed on the electric charge trapping film. A second dielectric film(133) including an aluminum silicate is formed on the first dielectric film. A third dielectric layer(135) including an aluminum oxide is formed on the second dielectric film.