| 摘要 |
PURPOSE: A shaping method using a plasma treatment is provided to increase the conductivity of a feature by plasma-treating non-condensed silver-contained nano-particles or condensed silver-contained nano-particles. CONSTITUTION: Highly n-doped silicon wafer(18) is prepared. A silicon oxide insulating layer(14) is formed on the upper side of the silicon wafer. A source electrode(20) and a drain electrode(22) are formed on the upper side of the silicon oxide insulating layer. An organic semiconductor layer(12) is formed on the upper side of the source electrode and the drain electrode and is formed between the source electrode and the drain electrode.
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