SEMICONDUCTOR MEMORY DEVICE HAVING IMPROVED PRECHARGE SCHEME FOR LOCAL I/O LINES

摘要

PURPOSE: A semiconductor memory device with the improved pre-charge scheme for a local input/output line is provided to reduce power which is consumed in a local input/output sense amplifier by minimizing disturbance with respect to bit-lines. CONSTITUTION: The data path circuit of a semiconductor memory device includes a bit-line sense amplifier(13), a local input/output line sense amplifier(19), a column selection unit(15), and a local input/output line pre-charging unit. The bit-line sense amplifier is driven by a first power voltage. The column selection unit connects one bit-line pair connected to the bit-line sense amplifier and the other bit-line pair connected to the local input/output line sense amplifier in response with a column selection signal.