Cubic memory array and method of creating thereof

摘要

A method of creating a memory circuit preferably includes 1) forming a first plurality of select-lines (20) in a plane substantially parallel to a substrate (10), 2) forming a second plurality of select-lines (19, 21) in a plane substantially parallel to the substrate (10), where the second plurality of select-lines is divided into first (19) and second (21) groups, where the first group (19) is formed in a direction normal to that of the first plurality of select-lines (20) and the second group (21) is formed in a direction substantially diagonal to that of the first group (20), 3) forming a plurality of pillars (18) normal to the substrate (10), and 4) forming an array of memory cells (22), each memory cell (22) being respectively coupled to a pillar (18) and one of each of said first (20) and second (19, 21) pluralities of select-lines.