| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method capable of growing high quality III-V group alloy semiconductors having a high nitrogen concentration without increasing concentrations of group V vacancies. <P>SOLUTION: A semiconductor manufacturing method for growing, on a predetermined semiconductor substrate 41, at least one layer of III-V alloy semiconductor composed of a plurality of group V elements including nitrogen and arsenic simultaneously comprises a step of growing the III-V alloy semiconductor by the metal-organic chemical vapor deposition (MOCVD) using a source material such as organic nitrogen compounds for nitrogen and a source material for arsenic under a partial pressure of the source material for arsenic in a reactor adjusted equal to or more than 2 Pa. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
