EXTREME ULTRAVIOLET PHOTORESIST FILM WITH PENTACENE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: An extreme ultraviolet photoresist film with pentacene and a method for forming the same are provided to be used in a semiconductor process with a width of less than 30 nm by forming the photosensitive film for the extreme ultraviolet radiation having the thickness of less than several nm. CONSTITUTION: The pentacene is evaporated in vacuum on the solid sample by using the thermal evaporation(S200). The solid sample deposited with the pentacene is radiated with the extreme ultraviolet(S210). The pentacene on a portion where the ultra violet ray is not radiated is removed by heating the solid sample deposited with the pentacene(S230).