发明名称 FERROELECTRIC MEMORY DEVICE
摘要 <p>A ferroelectric memory device manufacturing method includes the steps of forming an interlayer isolating film for covering a transistor formed on a semiconductor substrate; forming a conductive plug in the interlayer insulating film to contact a diffusion region of the transistor formed on the semiconductor substrate; forming a ferroelectric capacitor including a lower electrode, a ferroelectric film and an upper electrode; and forming a compound film including silicon (Si) and a CH group on a surface of the interlayer insulating film and a surface of the conductive plug by depositing a Si compound containing Si atoms and the CH groups; wherein the compound film is formed after forming the conductive plug, and the compound film is formed before forming the lower electrode; and a self-orientation film is formed on a surface of the compound film.</p>
申请公布号 KR20100101002(A) 申请公布日期 2010.09.15
申请号 KR20107017271 申请日期 2006.01.26
申请人 FUJITSU SEMICONDUCTOR LIMITED 发明人 SASHIDA NAOYA;MATSUURA KATSUYOSHI
分类号 H01L21/8247;H01L27/115 主分类号 H01L21/8247
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