发明名称 |
HALBLEITERBAUELEMENT UND VERFAHREN ZU SEINER HERSTELLUNG |
摘要 |
The semiconductor device (100) comprises at least one semiconductor element (20), a metallization structure comprising a first (31) and a second line (32) and extending thereon a resistor. An electrically insulating protection layer (36) is present on the resistor (35) and is defined in a pattern that is substantially identical to the resistor pattern and has a temperature stability up to a temperature that is at least equal to a deposition temperature of a passivation layer (37) to be deposited thereon so as to cover the metallization structure. Both the resistor (35) and the protection layer (36) are deposited conformally on the metallization structure and any underlying substrate. |
申请公布号 |
AT480006(T) |
申请公布日期 |
2010.09.15 |
申请号 |
AT20070705804T |
申请日期 |
2007.02.06 |
申请人 |
NXP B.V. |
发明人 |
STACHE, JOACHIM;HOFFMANN, RAINER;BURNUS, MICHAEL |
分类号 |
H01L21/02;H01L23/31;H01L23/522;H01L23/60;H01L27/01 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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