发明名称 A MICRO INFRARED RAY EMITTING SOURCE AND A METHOD FOR MANURATURING THE SAME
摘要 PURPOSE: A micro infrared ray generation source and a manufacturing method thereof are provided to prevent the heat stress in the middle of the heater by offering the heat metal part near the middle of the heater. CONSTITUTION: A low strain film(120) is formed on the top surface and the bottom surface of a semiconductor substrate(110). A heater(130) is formed in the middle of the low strain film of the top surface of the semiconductor substrate. First and second electrode parts(140, 140') are formed on the surface of the semiconductor substrate.
申请公布号 KR20100099781(A) 申请公布日期 2010.09.15
申请号 KR20090018286 申请日期 2009.03.04
申请人 KOREA ELECTRONICS TECHNOLOGY INSTITUTE 发明人 HWANG, HAK IN;LEE, DAE SUNG;SHIN, KYU SIK
分类号 H01L31/00 主分类号 H01L31/00
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