发明名称 |
A MICRO INFRARED RAY EMITTING SOURCE AND A METHOD FOR MANURATURING THE SAME |
摘要 |
PURPOSE: A micro infrared ray generation source and a manufacturing method thereof are provided to prevent the heat stress in the middle of the heater by offering the heat metal part near the middle of the heater. CONSTITUTION: A low strain film(120) is formed on the top surface and the bottom surface of a semiconductor substrate(110). A heater(130) is formed in the middle of the low strain film of the top surface of the semiconductor substrate. First and second electrode parts(140, 140') are formed on the surface of the semiconductor substrate.
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申请公布号 |
KR20100099781(A) |
申请公布日期 |
2010.09.15 |
申请号 |
KR20090018286 |
申请日期 |
2009.03.04 |
申请人 |
KOREA ELECTRONICS TECHNOLOGY INSTITUTE |
发明人 |
HWANG, HAK IN;LEE, DAE SUNG;SHIN, KYU SIK |
分类号 |
H01L31/00 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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