| 摘要 |
<p>PURPOSE: A three dimensional system-in-package structure is provided to form low resistance paths for a feed-through channels between a plurality of dies using via first through-silicon-vias and via last through-silicon-vias. CONSTITUTION: A first substrate(101) includes an active unit(102) and an interlayer dielectric substance(104). A first side(105), a second side(107), a via-first through-silicon via(TSV) via(103) are formed in the first substrate. The via-first TSV via is expanded by the first substrate and at least one first dielectric layer. A via-last TSV via is expanded by the first substrate and at least two first dielectric layers.</p> |
