发明名称 Current focusing memory architecture for use in electrical probe-based memory storage
摘要 An apparatus comprising a substrate, an electrode coupled to the substrate, a modifiable layer coupled to the electrode, and a current focusing layer coupled to the modifiable layer. The current focusing layer comprises a conductive region and an insulating region. A method comprising forming a modifiable layer on an electrode and forming a current focusing layer on the modifiable layer.
申请公布号 US7795607(B2) 申请公布日期 2010.09.14
申请号 US20060529830 申请日期 2006.09.29
申请人 INTEL CORPORATION 发明人 MIN KYU S.;FRANKLIN NATHAN R
分类号 H01L29/76;H01L47/00 主分类号 H01L29/76
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