发明名称 Method and apparatus for writing data to and reading data from phase-change random access memory
摘要 A method and apparatus for writing data to and reading data from a phase-change random access memory (PRAM) include encoding original data using a predetermined encoding function, selecting data, from among the original data and the encoded data, which require less power when being written to the PRAM, writing the selected data to the PRAM, generating marking information related to the selected data, and writing the marking information to the PRAM. Therefore, power consumption can be reduced when data are written to the PRAM.
申请公布号 US7796427(B2) 申请公布日期 2010.09.14
申请号 US20080231239 申请日期 2008.08.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM JIN-KYU;BANG KYOUNG-IL;LEE HYUNG-GYU
分类号 G11C11/00 主分类号 G11C11/00
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