Semiconductor devices having Fin-type active areas and methods of manufacturing the same

摘要

A semiconductor device having a fin type active area includes a plurality of active regions, a first device isolation layer and a recessed second device isolation layer disposed in a direction of gate electrodes of the semiconductor device. A recessed second device isolation layer and a first device isolation layer are disposed in a vertical direction of the gate electrodes. The first device isolation layer and the plurality of active regions are alternately disposed in a first direction of the plurality of active regions.