发明名称 Method of manufacturing semiconductor device
摘要 The invention is directed to enhancement of reliability and a yield of a semiconductor device by a method of manufacturing the semiconductor device with a supporting body without making the process complex. A second insulation film, a semiconductor substrate, a first insulation film, and a passivation film are etched and removed in this order using a resist layer or a protection layer as a mask. By this etching, an adhesive layer is partially exposed in an opening. At this time, a number of semiconductor devices are separated in individual semiconductor dies. Then, as shown in FIG. 10, a solvent (e.g. alcohol or acetone) is supplied to the exposed adhesive layer through the opening to gradually reduce its adhesion and thereby a supporting body is removed from the semiconductor substrate.
申请公布号 US7795115(B2) 申请公布日期 2010.09.14
申请号 US20060645811 申请日期 2006.12.27
申请人 SANYO ELECTRIC CO., LTD.;SANYO SEMICONDUCTOR CO., LTD.;SANYO SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 KAMEYAMA KOUJIRO;SUZUKI AKIRA;OIKAWA TAKAHIRO
分类号 H01L21/00 主分类号 H01L21/00
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