| 摘要 |
A plasma processing apparatus includes an upper matching unit 44 which is a variable matching unit whose impedance can be varied, and a main controller 100. The upper matching unit 44 includes a controller 104 for variably controlling the impedance positions of a variable reactance element of a matching circuit 102, a RF sensor for measuring a load impedance including the matching circuit 102, and a VPP measuring circuit 112 for measuring a peak value (peak-to-peak value) of a radio frequency voltage in a waveguide line at the output side of the upper matching unit 44. The main controller 100 executes and controls an autorunning of the matching units 44, 88 for optimizing an off preset of the impedance positions thereof. The plasma can be readily get ignited without requiring to set or change special processing conditions while influencing none of the processes.
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