| 摘要 |
An oxide high temperature superconductor and method of making which includes a first buffer layer composed of CeO3 formed on a sapphire R (1,−1, 0, 2) face substrate for reducing lattice mismatch between the sapphire R (1,−1, 0, 2) face substrate and the oxide high temperature superconductor thin film, and a second buffer layer composed of such an oxide high temperature superconductor but in which Ba is substituted with Sr formed on the first buffer layer. The first buffer layer reduces the lattice mismatch between the sapphire R (1,−1, 0, 2) face substrate and the oxide high temperature superconductor thin, the second buffer layer prevents an interfacial reaction with Ba, thereby permitting the epitaxial growth of an oxide high temperature superconductor thin film that excels in both crystallographic integrity and crystallographic orientation.
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